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| APTDF100H170G Diode Full Bridge Power Module + AC1 AC2 VRRM = 1700V IC = 100A @ Tc = 55C Application * * * * Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features * * * * * * * Benefits AC2 - Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration * * * * * * * + - AC1 Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Absolute maximum ratings Symbol VR VRRM IF(A V) IF(RMS) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Tc = 25C Tc = 55C Tj = 25C Max ratings 1700 120 Unit V RMS Forward Current Non-Repetitive Forward Surge Current These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-3 APTDF100H170G - Rev 1 June, 2006 100 125 300 A APTDF100H170G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic VF IRM Diode Forward Voltage Maximum Reverse Leakage Current Test Conditions IF = 100A VR = 1700V Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min Typ 2.2 2.1 Max 2.5 250 500 Unit V A Dynamic Characteristics Symbol Characteristic trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions Tj = 25C IF = 100A VR = 900V di/dt = 1000A/s Min Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Typ 572 704 20 35 70 100 Max Unit ns C A Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min 3500 -40 -40 -40 2.5 Typ Max 0.35 150 125 100 4.7 160 Unit C/W V C N.m g Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 SP4 Package outline (dimensions in mm) ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : www.microsemi.com 2-3 APTDF100H170G - Rev 1 June, 2006 APTDF100H170G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 Thermal Impedance (C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 0 0.00001 Forward Current vs Forward Voltage 250 t rr , Reverse Recovery Time (ns) I F, Forward Current (A) 200 150 100 50 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V F, Anode to Cathode Voltage (V) QRR, Reverse Recovery Charge (C) QRR vs. Current Rate Charge TJ=125C VR =900V TJ=125C TJ=25C Trr vs. Current Rate of Charge 800 700 600 500 400 100 A 200 A TJ=125C V R=900V TJ=25C 300 200 0 50 A 1000 2000 3000 4000 5000 6000 -diF/dt (A/s) IRRM vs. Current Rate of Charge I RRM, Reverse Recovery Current (A) 80 70 60 50 40 30 20 400 350 300 250 200 150 100 50 0 1000 2000 3000 4000 5000 6000 -di F/dt (A/s) TJ=125C VR =900V 100 A 200 A 50 A 200 A 100 A 50 A 0 1000 2000 3000 4000 5000 6000 -di F/dt (A/s) Max. Average Forward Current vs. Case Temp. 150 125 I F(AV) (A) 100 75 50 25 0 0 25 50 75 100 125 150 Case Temperature (C) Duty Cycle = 0.5 TJ=150C Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 3-3 APTDF100H170G - Rev 1 June, 2006 |
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